We present the most downloaded papers of the pss journal family from December.

physica status solidi (RRL)

• R. Sbiaa, H. Meng, S. N. Piramanayagam
  Materials with perpendicular magnetic anisotropy for magnetic random access memory [Review@RRL]
  Phys. Status Solidi RRL 2011, vol. 5, p. 413
• R. R. LaPierre, A. C. E. Chia, S. J. Gibson, C. M. Haapamaki, J. Boulanger, R. Yee, P. Kuyanov, J. Zhang, N. Tajik, N. Jewell, K. M. A. Rahman
  III–V nanowire photovoltaics: Review of design for high efficiency [Review@RRL]
  Phys. Status Solidi RRL 2013, vol. 7, p. 815
• Binghai Yan, Delin Zhang, Claudia Felser
  Topological surface states of Bi₂Se₃ coexisting with Se vacancies [Rapid Research Letter]
  Phys. Status Solidi RRL 2013, vol. 7, p. 148
• A. Mazid Munshi, Helge Weman
  Advances in semiconductor nanowire growth on graphene [Review@RRL]
  Phys. Status Solidi RRL 2013, vol. 7, p. 713
• Liang He, Xufeng Kou, Kang L. Wang
  Review of 3D topological insulator thin-film growth by molecular beam epitaxy and potential applications [Review@RRL]
  Phys. Status Solidi RRL 2013, vol. 7, p. 50
• Judy J. Cha, Kristie J. Koski, Yi Cui
  Topological insulator nanostructures [Review@RRL]
  Phys. Status Solidi RRL 2013, vol. 7, p. 15
• M. Veldhorst, M. Snelder, M. Hoek, C. G. Molenaar, D. P. Leusink, A. A. Golubov, H. Hilgenkamp, A. Brinkman
  Magnetotransport and induced superconductivity in Bi based three-dimensional topological insulators [Review@RRL]
  Phys. Status Solidi RRL 2013, vol. 7, p. 26
• Lukas Müchler, Frederick Casper, Binghai Yan, Stanislav Chadov, Claudia Felser
  Topological insulators and thermoelectric materials [Review@RRL]
  Phys. Status Solidi RRL 2013, vol. 7, p. 91
• Anna Isaeva, Bertold Rasche, Michael Ruck
  Bismuth-based candidates for topological insulators: Chemistry beyond Bi₂Te₃ [Review@RRL]
  Phys. Status Solidi RRL 2013, vol. 7, p. 39
• Haijun Zhang, Shou-Cheng Zhang
  Topological insulators from the perspective of first-principles calculations [Review@RRL]
  Phys. Status Solidi RRL 2013, vol. 7, p. 72
• Sergiu P. Albu, Andrei Ghicov, Jan M. Macak, Patrik Schmuki
  250 µm long anodic TiO₂ nanotubes with hexagonal self-ordering [Rapid Research Letter]
  Phys. Status Solidi RRL, 10.1002/pssr.200600069
• Helin Cao, Suyang Xu, Ireneusz Miotkowski, Jifa Tian, Deepak Pandey, M. Zahid Hasan, Yong P. Chen
  Structural and electronic properties of highly doped topological insulator Bi₂Se₃ crystals [Rapid Research Letter]
  Phys. Status Solidi RRL 2013, vol. 7, p. 133
• Jérôme Cayssol, Balázs Dóra, Ferenc Simon, Roderich Moessner
  Floquet topological insulators [Review@RRL]
  Phys. Status Solidi RRL 2013, vol. 7, p. 101
• B. Hoex, M. C. M. van de Sanden, J. Schmidt, R. Brendel, W. M. M. Kessels
  Surface passivation of phosphorus-diffused n⁺-type emitters by plasma-assisted atomic-layer deposited Al₂O₃ [Rapid Research Letter]
  Phys. Status Solidi RRL 2012, vol. 6, p. 4

physica status solidi (a)

• Anthony M. Diamond, Luca Corbellini, K. R. Balasubramaniam, Shiyou Chen, Shuzhi Wang, Tyler S. Matthews, Lin-Wang Wang, Ramamoorthy Ramesh, Joel W. Ager
  Copper-alloyed ZnS as a p-type transparent conducting material [Advanced Materials Physics]
  Phys. Status Solidi A 2012, vol. 209, p. 2101
• Thomas Walther, David J. Norris, Yang Qiu, Andrew Dobbie, Maksym Myronov, David R. Leadley
  The Stranski–Krastanow transition in SiGe epitaxy investigated by scanning transmission electron microscopy [Original Paper]
  Phys. Status Solidi A 2013, vol. 210, p. 187
• V. N. Jmerik, E. V. Lutsenko, S. V. Ivanov
  Plasma-assisted molecular beam epitaxy of AlGaN heterostructures for deep-ultraviolet optically pumped lasers [Feature Article]
  Phys. Status Solidi A 2013, vol. 210, p. 439
• Wolfgang Brütting, Jörg Frischeisen, Tobias D. Schmidt, Bert J. Scholz, Christian Mayr
  Device efficiency of organic light-emitting diodes: Progress by improved light outcoupling [Review Article]
  Phys. Status Solidi A 2013, vol. 210, p. 44
• B. Lüssem, M. Riede, K. Leo
  Doping of organic semiconductors [Review Article]
  Phys. Status Solidi A 2013, vol. 210, p. 9
• M. Benyoucef, M. Usman, T. Alzoubi, J. P. Reithmaier
  Pre-patterned silicon substrates for the growth of III–V nanostructures [Feature Article]
  Phys. Status Solidi A 2012, vol. 209, p. 2402
• Marius Grundmann, Friedrich-Leonhard Schein, Michael Lorenz, Tammo Böntgen, Jörg Lenzner, Holger von Wenckstern
  Cuprous iodide – a p-type transparent semiconductor: history and novel applications [Review Article]
  Phys. Status Solidi A 2013, vol. 210, p. 1671
• Masoud Dahmardeh, Mohamed Sultan Mohamed Ali, Tanveer Saleh, Tee Min Hian, Mehran Vahdani Moghaddam, Alireza Nojeh, Kenichi Takahata
  High-power MEMS switch enabled by carbon-nanotube contact and shape-memory-alloy actuator [Advanced Materials Physics]
  Phys. Status Solidi A 2013, vol. 210, p. 631
• Sebastian Reineke, Marc A. Baldo
  Recent progress in the understanding of exciton dynamics within phosphorescent OLEDs [Feature Article]
  Phys. Status Solidi A 2012, vol. 209, p. 2341
• Carolin M. Fella, Alexander R. Uhl, Yaroslav E. Romanyuk, Ayodhya N. Tiwari
  Cu₂ZnSnSe₄ absorbers processed from solution deposited metal salt precursors under different selenization conditions [Editor’s Choice]
  Phys. Status Solidi A 2012, vol. 209, p. 1043
• Dieter Weller, Oleksandr Mosendz, Gregory Parker, Simone Pisana, Tiffany S. Santos
  L1₀ FePtX–Y media for heat-assisted magnetic recording [Review Article]
  Phys. Status Solidi A 2013, vol. 210, p. 1245
• Joachim Piprek
  Efficiency droop in nitride-based light-emitting diodes [Feature Article]
  Phys. Status Solidi A 2010, vol. 207, p. 2217
• Simone Hofmann, Mauro Furno, Björn Lüssem, Karl Leo, Malte C. Gather
  Investigation of triplet harvesting and outcoupling efficiency in highly efficient two-color hybrid white organic light-emitting diodes [Advanced Materials Physic]
  Phys. Status Solidi A 2013, vol. 210, p. 1467
• Jun Liu, Jing Wang, Saijun Huang, Hsi-An Chen, Gufeng He
  Improved efficiency of blue phosphorescence organic light-emitting diodes with irregular stepwise-doping emitting layers [Editor’s Choice]
  Phys. Status Solidi A 2013, vol. 210, p. 489

physica status solidi (b)

• B. K. Meyer, A. Polity, D. Reppin, M. Becker, P. Hering, P. J. Klar, Th. Sander, C. Reindl, J. Benz, M. Eickhoff, C. Heiliger, M. Heinemann, J. Bläsing, A. Krost, S. Shokovets, C. Müller, C. Ronning
  Binary copper oxide semiconductors: From materials towards devices [Review Article]
  Phys. Status Solidi B 2012, vol. 249, p. 1487
• T. Hammerschmidt, I. A. Abrikosov, D. Alfè, S. G. Fries, L. Höglund, M. H. G. Jacobs, J. Koßmann, X.-G. Lu, G. Paul
  Including the effects of pressure and stress in thermodynamic functions [Feature Article]
  Phys. Status Solidi B 2014, vol. 251, p. 81
• B. K. Meyer, H. Alves, D. M. Hofmann, W. Kriegseis, D. Forster, F. Bertram, J. Christen, A. Hoffmann, M. Straßburg, M. Dworzak, U. Haboeck, A. V. Rodina
  Bound exciton and donor–acceptor pair recombinations in ZnO [Feature Article]
  Phys. Status Solidi B 2004, vol. 241, p. 231
• Henning Sirringhaus, Tomo Sakanoue, Jui-Fen Chang
  Charge-transport physics of high-mobility molecular semiconductors [Feature Article]
  Phys. Status Solidi B 2012, vol. 249, p. 1655
• G. Tkachov, E. M. Hankiewicz
  Spin-helical transport in normal and superconducting topological insulators [Review Article]
  Phys. Status Solidi B 2013, vol. 250, p. 215
• Justin P. Bergfield, Mark A. Ratner
  Forty years of molecular electronics: Non-equilibrium heat and charge transport at the nanoscale [Review Article]
  Phys. Status Solidi B 2013, vol. 250, p. 2249
• Qimiao Si, Silke Paschen
  Quantum phase transitions in heavy fermion metals and Kondo insulators [Review Article]
  Phys. Status Solidi B 2013, vol. 250, p. 425
• Karl-Heinz Ernst
  Molecular chirality at surfaces [Review Article]
  Phys. Status Solidi B 2012, vol. 249, p. 2057
• Tauc, J.; Grigorovici, R.; Vancu, A.
  Optical Properties and Electronic Structure of Amorphous Germanium [Original Paper]
  Phys. Status Solidi B 1966, vol. 15, p. 627
• Markus Morgenstern
  Scanning tunneling microscopy and spectroscopy of graphene on insulating substrates [Feature Article]
  Phys. Status Solidi B 2011, vol. 248, p. 2423
• Matthias Wuttig
  Phase change materials: Chalcogenides with remarkable properties due to an unconventional bonding mechanism [Feature Article]
  Phys. Status Solidi B 2012, vol. 249, p. 1843
• Claus Klingshirn, J. Fallert, H. Zhou, J. Sartor, C. Thiele, F. Maier-Flaig, D. Schneider, H. Kalt
  65 years of ZnO research – old and very recent results [Review Article]
  Phys. Status Solidi B 2010, vol. 247, p. 1424
• Ladislav Kavan, Jun-Ho Yum, Michael Graetzel
  Application of graphene-based nanostructures in dye-sensitized solar cells [Invited Article]
  Phys. Status Solidi B 2013, vol. 250, p. 2643
• Markus Heyde, Georg H. Simon, Leonid Lichtenstein
  Resolving oxide surfaces – From point and line defects to complex network structures [Feature Article]
  Phys. Status Solidi B 2013, vol. 250, p. 895
• Bässler, H.
  Charge Transport in Disordered Organic Photoconductors a Monte Carlo Simulation Study [Review Article]
  Phys. Status Solidi B 1993, vol. 175, p. 15

physica status solidi (c)

• Patrick Waltereit, Wolfgang Bronner, Rudolf Kiefer, Rüdiger Quay, Michael Dammmann, Markus Cäsar, Peter Brückner, Stefan Müller, Michael Mikulla, Oliver Ambacher
  Trade-offs between performance and reliability in AlGaN/GaN transistors [Contributed Article]
  physica status solidi c 2012, vol. 9, p. 365
• Cleuson de Menezes Atayde, Ioshiaki Doi
  Highly stable hydrophilic surfaces of PDMS thin layer obtained by UV radiation and oxygen plasma treatments [Contributed Article]
  physica status solidi c 2010, vol. 7, p. 189
• Naoya Aihara, Hideaki Araki, Akiko Takeuchi, Kazuo Jimbo, Hironori Katagiri
  Fabrication of Cu₂SnS₃ thin films by sulfurization of evaporated Cu-Sn precursors for solar cells [Contributed Article]
  Phys. Status Solidi C 2013, vol. 10, p. 1086
• Noritoshi Maeda, Hideki Hirayama
  Realization of high-efficiency deep-UV LEDs using transparent p-AlGaN contact layer [Contributed Article]
  Phys. Status Solidi C 2013, vol. 10, p. 1521
• Toshio Kamiya, Kenji Nomura, Masahiro Hirano, Hideo Hosono
  Electronic structure of oxygen deficient amorphous oxide semiconductor a-InGaZnO_4–x : Optical analyses and first-principle calculations [Contributed Article]
  physica status solidi c 2008, vol. 5, p. 3098
• Hisashi Saito, Yoshiharu Takada, Masahiko Kuraguchi, Miki Yumoto, Kunio Tsuda
  Over 550 V breakdown voltage of InAlN/GaN HEMT on Si [Contributed Article]
  Phys. Status Solidi C 2013, vol. 10, p. 824
• Yunyou Lu, Shu Yang, Qimeng Jiang, Zhikai Tang, Baikui Li, Kevin J. Chen
  Characterization of V_T-instability in enhancement-mode Al₂O₃-AlGaN/GaN MIS-HEMTs [Contributed Article]
  Phys. Status Solidi C 2013, vol. 10, p. 1397
• R. Kizu, M. Yamaguchi, H. Amano
  Growth of GaAs nanowires on Si substrate by molecular beam epitaxy under alternating supply [Contributed Article]
  Phys. Status Solidi C 2013, vol. 10, p. 1365