A novel solution-processing organic flexible synaptic device with bidirectional linear conductance regulation.
Think Like a Brain Using Artificial Synapses
A new physical approach to the design of intelligent memory, logic, and cognitive devices for brain-like computation.
Ionotronic Neuromorphic Devices for Bionic Neural Networks
Neuromorphic devices have great potential in the development of multifunctional intelligent artificial perception learning systems.
New Entries to the Advanced Intelligent Systems Special Series
There are new top papers in Advanced Intelligent Systems special series. All included papers are free to read for a limited time!
Beyond the Horizon of CMOS
For decades the density of integrated circuits has grown exponentially, according to the empirical Moore´s law published in 1965. In this period, the storage density has increased by a factor of about 100 million. Yet, this rapid development is approaching fundamental...
Low-Power, High-Speed Analog Computing [Video]
Researchers from the University of Massachusetts and Hewlett Packard Labs present a memristor platform for analog computations and forecast a device performance at least 16 times greater than purely digital solutions.
Organic Ferroelectric Tunnel Junction for Memristive Devices [Video]
Researchers report a ferroelectric tunnel junction for organic-based memristors having a record-high tunneling electroresistance (TER) at room temperature, which could ensure large data integration density in computers.
Unveiling the Filament Nature of Resistive Switching Phenomena
A Ni2O3 phase as a highly possible filament structure, where the Ni2O3 phase was directly observed by high-resolution TEM in the unipolar NiO thin films by comparing low resistance state and high resistance state samples.
Efficient, Neuron-Inspired Computing
Jeong et al. argue that a change in paradigm away from the CPU+Memory computing approach and towards a materials approach which mimics biological neurons as synapses is needed.
Controlling the oxygen content in nanometer thick oxide thin films
A MIT research group led by Prof. Harry L. Tuller has attempted to control the oxygen content of oxide thin films in situ through electrochemical methods.